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Researchers show that DFT-relaxed structural distortions cause machine-learning screens to misclassify hidden altermagnets as antiferromagnets, and propose a tolerance-aware symmetry pipeline that discovers six new altermagnet materials including Ba₂FeMoO₆ and Sr₂FeWO₆, with spin splitting of 85–405 meV at zero net magnetization.
Vals AI reports that a team of AI agents (Claude Opus 5.5) designed one and identified an existing candidate room-temperature antiferromagnetic semiconductor material, predicted by calculations to have the properties needed for next-generation spintronic computer memory. The work maps out the trade-offs between ferromagnetic, antiferromagnetic, and Luttinger-compensated materials for storage devices.