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Diamond Foundry details its all-diamond transistor platform that uses hydrogen-terminated surface transfer doping to create a two-dimensional hole gas (2DHG), avoiding ion implantation defects while preserving diamond's high thermal conductivity and breakdown strength for high-power and high-frequency electronics.
A semiconductor simulator provides animated visualizations of transistor operation, displaying electron and hole motion, diffusion, drift, and current/voltage probes for BJTs and MOSFETs.
Article describes a counterintuitive oscillator circuit using a reversed NPN transistor with no base connection, which works via reverse avalanche breakdown.
A hobbyist describes how to create a homemade FET transistor using a cadmium sulfide photocell, tape, and water as an insulated gate, demonstrating transistor action in a dark environment.
Samsung demonstrates the first 3D Stacked FETs with triple nanosheet channels at a 42nm gate pitch, presented at the 2026 VLSI Symposium, achieving a high review score and highlighting a new vertical transistor architecture for advanced logic scaling.
Researchers at POSTECH developed a zinc oxide-tellurium transistor that performs multiple circuit functions in a single device, reducing transistor requirements by 75% and increasing processing speeds fourfold, with potential applications in compact AI hardware and wearable electronics.